t ra nsi en t v ol ta ge protecti on device 12 0 volts features oxide - glass passivated junction bi - directional protection in a single device surge capabilities up to 8 0a@10/1000us or 2 50a@8/20us high off - state impedance and low on - state vo ltage plastic material has ul flammability classification 94 v - 0 mechanical data case : molded plastic polarity : none cathode band denotes approx weight : 0.093grams maximum ratings characteristic symbol value unit no n - repetitive peak impulse current i pp 8 0a 10/1000us no n - repetitive peak o n - state current i tsm 30 a 8.3ms, one - half cycle operating temperature range t op - 40~1 50 o c junction and storage temperature range t j , t stg - 55~15 0 o c thermal resistance characteristic symbol value unit thermal re s istance junction to lead 2 0 o c/w thermal resistance junction to ambient 1 0 0 o c/w on recommended pad layout typical positive temperature coefficient for breakdown voltage 0.1%/ o c v b r / t j ww w . mccsemi .com do - 214aa (smbj) h j e f g a b d c cathode band dimensions inches mm dim min max min max note a .0 78 . 0 96 2. 00 2. 44 b .077 .083 1.96 2. 10 c .0 02 .00 8 .0 5 . 20 d --- .02 --- .51 e .03 0 .0 60 . 76 1. 52 f .065 .0 91 1.65 2. 32 g . 2 05 .220 5. 21 5.59 h .160 .1 8 0 4. 0 6 4.57 j . 13 0 .155 3. 30 3 . 94 0.0 7 0? 0. 0 9 0 " 0. 0 8 5 ? suggested solder pad layout t smbj 050 9 c - 13 0 r ja r j l
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www. mccsemi .com mcc electrical characteristic @25 unless otherwise specified maximum rated surge waveform maximum rated surge waveformmaximum rated surge waveform maximum rated surge waveform waveform standard ipp (a) 2/10 us gr-1089-core 2 5 0 8/20 us iec 61000-4-5 250 10/160 us fcc part 68 150 10/700 us itu-t k20/21 100 10/560 us fcc part 68 10 0 10/1000 us gr-1089-core 8 0 time 0 50 100 0 ipp ; peak pulse current (%) peak value (ipp) half value tr tp tr = rise time to peak value tp = decay time to half value s y m bol pa r a m e t e r v drm s t and - off vo l t age i drm lea k age cu r r e nt at s t a nd - o f f vol t age v br b r ea k d o w n v o l t age i br b r ea k d o w n c ur r ent v bo b r ea k over vol t age i bo b r ea k over cu r r ent i h h o l d i n g c u r r e n t n o t e : 1 v t on s t a t e v ol t age i pp p eak pu l s e c u r r ent c o o f f - s t a t e c apaci t an c e no t e : 2 i v v drm i pp i bo i h i br i drm v br v bo v t n o t e 1. i h > ( v l / r l ) if t h i s c r i t er i o n i s not obey e d , t h e t s p d tr i ggers but d o es n o t return c o rrect l y to h i gh-res i stance sta t e . t he surge reco v e ry t i m e. it does not e xceed 30 m s. 2. of f - s t a t e c a p a c i t a n c e m e a s u r e d a t f = 1.0 m hz , 1 . 0 v r m s s i g n a l , v r = 2 v d c b i as. parameter rated repetitive off - state voltage off - state leakage curr ent@v drm breakover voltage on - state voltage @i t =1.0a breakover current holding current off - state capacitance symbol v drm i drm v bo v t i bo - i bo+ i h - i h+ c j units volts ua volts volts ma ma ma ma pf limit max max max max min max min max typ. t smbj 0509 c -130 t smbj 0 5 09 c - 130 120 5 160 5 50 800 150 800 9 0
mcc www. mccsemi .com t smbj 0 5 0 9 c -130 -50 -25 0 2 5 5 0 7 5 100 125 150 175 tj ; junction temperature ( ) 0.9 0.95 1 1.05 1.1 1.15 1.2 normalised breakdown voltage fig.2 - relative variation of breakdown voltage v.s junction temperature -25 0 2 5 5 0 7 5 100 125 150 tj , junction temperature ( ) 0.001 0.01 0.1 1 10 100 i(drm) , off-state current(ua) fig.1 - off-state current v.s junction temperature v drm = 50v v br (t j ) v br (t j =25 ) -50 -25 0 2 5 5 0 7 5 100 125 150 175 tj ; junction temperature ( ) 0.95 1 1.05 1.1 normalised breakover voltage fig.3 - relative variation of breakover voltage v.s junction temperature v bo (t j ) v bo (t j =25 ) 110 v(t) ; on-state voltage 1 10 100 i(t) ; on-state current (a) fig.4 - on-state current v.s on-state voltage t j = 25 -50 -25 0 2 5 5 0 7 5 100 125 tj ; junction temperature ( ) 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 normalised holding current fig.5 - relative variation of holding current v.s junction temperature i h (t j ) i h (t j =25 ) 1 1 0 100 vr ; reverse voltage (v) 0.1 1 normalised capacitance fig.6 - relative variation of junction capacitance v.s reverse voltage bias tj =25 f=1mhz v rms = 1v c o (vr) c o (vr = 1v)
mcc www. mccsemi .com telecom equipment e.g. modem tip ring fuse fusefuse fuse tspd 1 tspd 1tspd 1 tspd 1 telecom equipment e.g. isdn tip ring tspd 1 tspd 1tspd 1 tspd 1 tspd 2 tspd 2tspd 2 tspd 2 ptc ptc telecom equipment e.g. line card tip ring tspd 2 tspd 2 tspd 2 tspd 2 tspd 3 tspd 3tspd 3 tspd 3 tspd 1 tspd 1tspd 1 tspd 1 ptc ptc t yp i c a l app l i c a t i o n c i rcu i t s t h e p t c ( p osi t ive t e m pera t ure coe f f i cien t ) is an overcurrent pro t ec t i on device. t smbj 0 5 0 9 c -130
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